MAX11014BGTM+

Product Summary

The MAX11014BGTM+ is a kind of automatic RF MESFET amplifier drain-current controller. The MAX11014BGTM+ sets and controls bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014BGTM+ integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation.integrate SRAM lookup tables (LUTs) that can be used to store temperature and drain-current compensation data.The MAX11014BGTM+ includes self-calibration modes to minimize error over time, temperature, and supply voltage. The typical applications of include: (1)cellular base-station RF MESFET bias controllers; (2)point-to-point or point-to-multipoint links; (3)industrial process control.

Parametrics

MAX11014BGTM+ absolute maximum ratings: (1)AVDD to AGND: -0.3V to +6V; (2)DVDD to DGND: -0.3V to +6V; (3)AGND to DGND: -0.3V to +0.3V; (4)AVSS to AGND: -0.3V to -6V; (5)RCS1+, RCS1-, RCS2+, RCS2- to GATEVSS: -0.3V to +13V; (6)RCS1- to RCS1+: -6V to +0.3V; (7)RCS2- to RCS2+: -6V to +0.3V; (8)GATEVSS to AGND: +0.3V to -6V; (9)GATE1, GATE2 to AGND: (GATEVSS - 0.3V) to (AVDD + 0.3V); (10)DVDD to AVDD: -0.3V to (AVDD + 0.3V); (11)All Other Analog Inputs to AGND: -0.3V to (AVDD + 0.3V); (12)PGAOUT1, PGAOUT2 to AGND: -0.3V to (AVDD + 0.3V); (13)SCLK/SCL, DIN/SDA, CS/A0, N.C./A2, CNVST, OPSAFE1, OPSAFE2 to DGND: -0.3V to (DVDD + 0.3V); (14)DOUT/A1, SPI/I2C, ALARM, BUSY to DGND: -0.3V to (DVDD + 0.3V); (15)Maximum Current into Any Pin: 50mA; (16)Continuous Power Dissipation (TA = +70℃) 48-Pin Thin QFN (derate 27.0mW/℃ above +70℃): 2162.2mW; (17)Operating Temperature Range: -40℃ to +105℃; (18)Storage Temperature Range: -60℃ to 150℃; (19)Junction Temperature: +150℃; (20)Lead Temperature (soldering, 10s): +300℃.

Features

MAX11014BGTM+ features: (1)Dual Drain-Current-Sense Gain Amplifier: Preset Gain of 4; ±0.5% Accuracy for Sense Voltages Between; 75mV and 625mV ; (2)Common-Mode Sense-Resistor Voltage Range: 0.5V to 11V; (3)Low-Noise Output GATE Bias with ±10mA GATE Drive; (4)Fast Clamp and Power-On Reset; (5)12-Bit DAC Controls MESFET GATE Voltage; (6)Internal Temperature Sensor/Dual Remote Diode Temperature Sensors; (7)Internal 12-Bit ADC Measures Temperature and Voltage; (8)Pin-Selectable Serial Interface: 3.4MHz I2C-Compatible Interface; 20MHz SPI-/MICROWIRE-Compatible Interface.

Diagrams